2SC3650
Elektronische Bauelemente
1.2 A , 30 V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package.
Large Current Capacity.
SOT-89
4
High DC Current Gain
Low V
CE(sat)
1
A
E
2
3
C
APPLICATION
LF Amplifiers, Various Drivers, Muting Circuit
B
F
G
H
J
D
K
L
MARKING
CF
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
Leader Size
7 inch
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
30
25
15
1.2
500
250
150, -55~150
Unit
V
V
V
A
mW
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to emitter Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Min
30
25
15
-
-
800
600
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
200
17
Max
-
-
-
0.1
0.1
3200
-
0.5
1.2
-
-
Unit
V
V
V
µA
µA
Test condition
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=10V, I
C
=0
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=10mA
V
V
MHz
pF
I
C
=500mA, I
B
=10mA
I
C
=500mA, I
B
=10mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0 , f=1MHz
Any changes of specification will not be informed individually.
02-Nov-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
