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2SC3052_11 参数 Datasheet PDF下载

2SC3052_11图片预览
型号: 2SC3052_11
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑封装晶体管 [NPN Plastic-Encapsulate Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 641 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SC3052_11的Datasheet PDF文件第2页浏览型号2SC3052_11的Datasheet PDF文件第3页  
2SC3052
Elektronische Bauelemente
0.2A , 50V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Excellent linearity of DC forward current gain.
Low collector to emitter saturation voltage
V
CE(sat)
=0.3V max. (@I
C
=100mA, I
B
=10mA)
1
SOT-23
A
L
3
3
Top View
2
C B
1
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC3052-E
150~300
LE
2SC3052-F
250~500
LF
2SC3052-G
400~800
LG
K
E
D
F
REF.
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
A
B
C
D
E
F
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
50
50
6
200
150
125, -55~125
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
Min.
50
50
6
-
-
150
50
-
-
180
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
800
-
0.3
1
-
4
15
Unit
V
V
V
µA
µA
Test Conditions
I
C
=100µA, I
E
=0
I
C
=100µA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=0.1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=10mA
V
CE
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
E
= -0.1mA, f=1KHz,
R
G
=2K
V
V
MHz
pF
dB
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 1 of 3