欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC2859 参数 Datasheet PDF下载

2SC2859图片预览
型号: 2SC2859
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑封装晶体管 [NPN Plastic-Encapsulate Transistor]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 1 页 / 103 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2SC2859
Elektronische Bauelemente
0.5A , 35V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
A
3
3
Excellent h
FE
Linearity
Switching Applications
L
Top View
C B
1
2
2
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
Marking
2SC2859-O
70~140
WO
2SC2859-Y
120~240
WY
2SC2859-GR
200~400
WG
F
K
1
E
D
G
REF.
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
A
B
C
D
E
F
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
35
30
5
500
150
833
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE
f
T
C
ob
Min.
35
30
5
-
-
70
25
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
300
7
Max.
-
-
-
0.1
0.1
400
70
0.25
1
-
-
Unit
V
V
V
μA
μA
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=400mA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=20mA
V
CB
=6V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
V
V
MHz
pF
14-Mar-2011 Rev. A
Page 1 of 1