2SC2717
Elektronische Bauelemente
0.05A , 30V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G
H
High Gain：G
pe
=33 dB(Typ.)(f =45MHz)
Good Linearity of h
FE
J
A
B
K
D
Base
Emitter
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
30
25
4
50
300
125, -55~125
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation voltage
Transition Frequency
Collector Output Capacitance
Collector to Base Time Constant
Power Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
C
C.rbb’
Gpe
Min.
30
25
4
-
-
40
-
-
300
0.8
-
28
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
240
0.2
1.5
-
2
25
36
Unit
V
V
V
μA
μA
V
V
MHz
pF
ps
dB
Test Condition
I
C
=100μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=12.5V, I
C
=12.5mA
I
C
=15mA, I
B
=1.5mA
I
C
=15mA, I
B
=1.5mA
V
CE
=12.5V, I
C
=12.5mA
V
CB
=10V, I
E
=0, f=30MHz
V
CB
=10V, I
E
=-1mA, f=30MHz
V
CC
=12.5V, I
E
=-12.5mA,
f=45MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Mar-2011 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
