2SC2274
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.5 A , 60 V
NPN Plastic Encapsulated Transistor
FEATURES
High Breakdown Voltage
High Current
Low Saturation Voltage
TO-92
G
H
J
A
D
B
Emitter
Collector
Base
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
2SC2274-D
60~120
2SC2274-E
100~200
2SC2274-F
160~320
E
K
REF.
A
B
C
D
E
F
G
H
J
K
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
60
50
5
0.5
600
208
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
*
Min.
60
50
5
-
-
60
35
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
5
Max.
-
-
-
1
1
320
-
0.6
1.2
-
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
=0.01mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.01mA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=400mA
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
V
MHz
pF
I
C
=400mA, I
B
=40mA
I
C
=400mA, I
B
=40mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Feb-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
