2SC2235
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Silicon
General Purpose Transistor
FEATURES
Complementary to 2SA965
TO-92 MOD
6.0
±0.2
4.9
±0.2
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
B
B
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
B
B
Value
120
120
5
0.8
0.9
150
-55to+150
Units
V
V
V
A
W
℃
℃
1.0
±0.1
B
B
V
EBO
B
B
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
I
C
B
B
P
C
B
B
14
±0.2
0.50
+0.1
–0.1
(1.50
Typ.)
1.9
+0.1
–0.1
1 2 3
3.0
±0.1
0.45
+0.1
–0.1
V
CEO
T
J
B
B
T
stg
B
B
2.0
+0.3
–0.2
8.6
±0.2
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
B
unless otherwise specified)
Test
conditions
B
B
Symbol
V
(BR)CBO
B
B
B
B
MIN
120
120
5
TYP
MAX
UNIT
V
V
V
I
C
=1mA,I
E
=0
B
V
(BR)CEO
B
I
C
=10mA,I
B
=0
B
B
B
B
V
(BR)EBO
B
B
I
E
=1mA,I
C
=0
B
B
B
B
I
CBO
B
B
V
CB
=120V,I
E
=0
B
B
B
B
0.1
0.1
80
240
1.0
1.0
120
30
μA
μA
I
EBO
B
B
V
EB
=5V,I
C
=0
B
B
B
B
h
FE
B
B
B
V
CE
=5V,I
C
=100mA
B
B
B
B
V
CE
(sat)
V
BE
B
B
I
C
=500mA,I
B
=50mA
B
B
B
B
V
V
MHz
pF
I
C
=500mA, V
CE
=5V
B
B
B
B
f
T
B
B
V
CE
=5V, I
C
=100mA
B
B
B
B
Cob
V
CE
=10V, I
E
=0
B
B
B
B
f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE
O
80
-
160
Y
120
-
240
http://www.SeCoSGmbH.com/
17-May-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
