2SC2120
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.8 A , 35 V
NPN Plastic Encapsulated Transistor
FEATURES
High DC Current Gain
Complementary to 2SA950
G
H
TO-92
CLASSIFICATION OF h
FE
Product-Rank
Range
2SC2120-O
100~200
2SC2120-Y
160~320
K
J
A
B
D
1
Emitter
2
Collector
3
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
E
C
F
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
35
30
5
0.8
0.6
208
150, -55~150
Unit
V
V
V
A
W
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Collector Output Capacitance
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
C
ob
f
T
Min.
35
30
5
-
-
-
100
-
-
-
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.1
320
0.5
0.8
13
-
Unit
V
V
V
µA
µA
µA
V
V
pF
MHz
Test Conditions
I
C
=0.1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=35V, I
E
=0
V
CE
=25V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=500mA, I
B
=20mA
V
CE
=1V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V, I
C
=10mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
