欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC2120 参数 Datasheet PDF下载

2SC2120图片预览
型号: 2SC2120
PDF下载: 下载PDF文件 查看货源
内容描述: NPN型塑料封装晶体管 [NPN Type Plastic Encapsulate Transistors]
分类和应用: 晶体晶体管放大器
文件页数/大小: 2 页 / 278 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SC2120的Datasheet PDF文件第2页  
2SC2120
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
NPN
Type
Plastic Encapsulate Transistors
FEATURES
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
I
C
P
CM
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector Current -Continuous
Power Dissipation
Junction and Storage Temperature
Value
35
0.8
0.6
-55-150
Units
V
A
W
1. EMITTER
2. COLLECTOR
1
2
3
1 23
3
.
BASE
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
unless
otherwise
MIN
35
30
5
specified)
TYP
MAX
UNIT
V
V
V
0.1
0.1
0.1
µA
µA
µA
Test
conditions
Ic= 0.1mA , I
E
=0
I
C
= 10 mA , I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
= 35V , I
E
=0
V
CE
= 25V , I
B
=0
V
EB
= 5 V,
V
CE
=1 V,
I
C
=0
I
C
= 100mA
100
320
0.5
0.8
V
V
MHz
I
C
= 500 mA, I
B
= 20 mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 5 V, I
C
= 10mA
100
f
T
CLASSIFICATION
Rank
Range
OF
h
FE
O
100-200
Y
160-320
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
2