2SC1959
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.5 A , 35 V
NPN Plastic Encapsulated Transistor
FEATURES
Excellent h
FE
Linearity
High Transition Frequency
TO-92
G
H
J
A
D
B
Emitter
Collector
Base
CLASSIFICATION OF h
FE
Product-Rank
hFE(1)
Range
hFE(2)
2SC1959-O
70~140
25Min
2SC1959-Y
120~240
40Min
2SC1959-GR
200~400
E
K
REF.
A
B
C
D
E
F
G
H
J
K
C
F
-
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
35
30
5
500
500
250
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
C
ob
f
T
Min.
35
30
5
-
-
70
25
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
7
300
Max.
-
-
-
0.1
0.1
400
-
0.25
1
-
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=400mA
V
V
pF
MHz
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=20mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
