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2SC1923 参数 Datasheet PDF下载

2SC1923图片预览
型号: 2SC1923
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑料封装晶体管 [NPN Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 78 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2SC1923
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.02 A , 40 V
NPN Plastic Encapsulated Transistor
FEATURES
General Purpose Switching and Amplification
TO-92
G
H
J
A
D
B
K
Emitter
Collector
Base
CLASSIFICATION OF h
FE
Product-Rank
Range
2SC1923-R
40~80
2SC1923-O
70~140
2SC1923-Y
100~200
E
REF.
A
B
C
D
E
F
G
H
J
K
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector

Base

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
40
30
4
20
100
1250
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
Min.
40
30
4
-
-
40
-
Typ.
-
-
-
-
-
-
550
Max.
-
-
-
0.5
0.5
200
-
Unit
V
V
V
μA
μA
MHz
Test Conditions
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=18V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. A
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