2SC1383L/2SC1384L
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.9
±0.2
NPN Silicon
General Purpose Transistor
TO-92L
3.9
±0.2
FEATURE
Power dissipation
2.0
+0.3
–0.2
14
±0.2
0.45
+0.1
–0.1
(1.27
Typ.)
1.4
+0.R2
–0.2
0.40
+0.05
–0.05
8.0
±0.2
P
CM
:
Collector current
I
CM
:
1 W (Tamb=25℃)
1 A
1.0
±0.1
Collector-base voltage
V
(BR)CBO
:
2SC1383L: 30 V
2SC1384L: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
1 2 3
2.54
±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
2SC1383L
2SC1384L
Collector-emitter breakdown voltage
2SC1383L
2SC1384L
Emitter-base breakdown voltage
Collector cut-off current
unless
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
h
FE(1)
otherwise
Test
specified)
MIN
30
60
25
50
5
0.1
85
50
0.4
1.2
100
V
V
MHz
340
MAX
UNIT
V
V
V
µA
conditions
Ic= 10µA , I
E
=0
I
C
=2mA ,
I
B
=0
I
E
= 10µA, I
C
=0
V
CB
=20V ,
V
CE
=10 V,
V
CE
=5 V,
I
E
=0
I
C
= 500mA
I
C
= 1A
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
I
C
= 500m A, I
B
=50mA
I
C
= 500mA ,
I
B
= 50mA
f
T
V
CE
= 10 V, I
C
= 50mA
CLASSIFICATION OF h
FE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
