2SC1815W
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar
Transistor
Description
The 2SC1815W is designed for use in
driver stage of AF amplifier and general
purpose amplificaion.
REF.
A
A1
A2
D
E
HE
Min.
0.80
0
0.80
1.80
1.15
1.80
Millimeter
Max.
1.10
0.10
1.00
2.20
1.35
2.40
REF.
L1
L
b
c
e
Q1
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Millimeter
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
o
C
Parameter
Value
60
50
5
150
225
-55~+150
Units
V
V
V
mA
mW
O
I
C
P
D
T
J,
T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)
*V
BE
(sat)
*h
FE1
*h
FE2
fT
C
ob
Min
60
50
5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
Unit
V
V
V
nA
nA
mV
V
Test Conditions
I
C
= 100
µA
I
C
= 1mA
I
E
= 10µA
V
CB
= 60V
V
EB
=5V
I
C
=100mA,I
B
=10mA
I
C
=100mA,I
B
=10mA
V
CE
= 6 V, I
C
=2mA
V
CE
= 6 V, I
C
=150mA
100
100
250
1
700
-
-
3.5
MH z
pF
V
CE
= 10 V, I
C
= 1mA,f=100MHz
V
CB
=10V , f=1MHz
*Pulse width
≦
380
µ
s, Duty Cycle
≦
2%
Classification of hFE
Rank
Range
C4Y
120~240
C4G
200~400
C4B
350~700
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
