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2SC1654 参数 Datasheet PDF下载

2SC1654图片预览
型号: 2SC1654
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 3 页 / 434 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SC1654的Datasheet PDF文件第2页浏览型号2SC1654的Datasheet PDF文件第3页  
2SC1654
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.05A , 180V
NPN Epitaxial Planar Transistor
FEATURE
SOT-23
A
3
3
High Frequency Power Amplifier Application
Power Switching Applications
L
Top View
C B
1
2
2
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
Marking Code
2SC1654-N5
90~180
N5
2SC1654-N6
135~270
N6
2SC1654-N7
200~400
N7
F
K
1
E
D
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
J
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector


Base

ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Emitter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
180
160
5
50
150
833
150, -55 ~ 150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min.
180
160
5
-
-
90
70
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
2.3
Max.
-
-
-
0.1
0.1
400
-
0.3
1
-
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=130V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=3V, I
C
=15mA
V
CE
=3V, I
C
=1mA
V
V
MHz
pF
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
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