2SC1383L / 2SC1384L
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage V
CE(sat)
.
Complementary pair with 2SA683 and 2SA684.
G
H
TO-92L
J
A
D
1
Emitter
2
Collector
3
Base
REF.
Millimeter
Min.
Max.
4.70
5.10
7.80
8.20
13.80
14.20
3.70
4.10
0.35
0.55
0.35
0.45
1.27 TYP.
1.28
1.58
2.44
2.64
0.60
0.80
CLASSIFICATION OF h
FE(1)
Product-Rank
Product-Rank
Range
2SC1383L-Q
2SC1384L-Q
85~170
2SC1383L-R
2SC1384L-R
120~240
2SC1383L-S
B
2SC1384L-S
170~340
K
E
C
F
A
B
C
D
E
F
G
H
J
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
2SC1383L
2SC1384L
2SC1383L
2SC1384L
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
30
60
25
50
5
1
1
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown 2SC1383L
Voltage
2SC1384L
Collector to Emitter
Breakdown Voltage
Collector Cut - Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
2SC1383L
2SC1384L
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
Min.
30
60
25
50
5
-
85
50
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
200
Max.
-
-
-
-
-
0.1
340
-
0.4
1.2
-
Unit
V
V
V
µA
Test Conditions
I
C
=10µA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=500mA
V
CE
=5V, I
C
=1A
Emitter to Base Breakdown Voltage
V
V
MHz
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
