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2SC1318A 参数 Datasheet PDF下载

2SC1318A图片预览
型号: 2SC1318A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑料封装晶体管 [NPN Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 130 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SC1318A的Datasheet PDF文件第2页  
2SC1318A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.5 A, 80 V
NPN Plastic Encapsulated Transistor
FEATURES
TO-92
Collector output capacitance:
Cob=11 pF (TYP), 20 pF (MAX)
G
H
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
2SC1318A-Q
85~170
2SC1318A-R
120~240
2SC1318A-S
170~340
K
J
A
B
D
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
80
70
5
0.5
750
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min
80
70
5
-
85
40
-
-
-
-
Typ
-
-
-
-
-
-
-
-
120
11
Max
-
-
-
0.1
340
-
0.6
1.5
-
20
Unit
V
V
V
μA
Test condition
I
C
= 10μA, I
E
=0
I
C
= 2mA, I
B
=0
I
E
= 10μA, I
C
=0
V
CB
= 20V, I
E
=0
V
CE
= 10V, I
C
= 0.15A
V
CE
= 10V, I
C
= 0.5A
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CE
= 10V, I
C
= 50mA, f=200MHz
V
CB
= 10V, I
E
=0, f=1MHz
V
V
MHz
pF
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
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