2SC1383/2SC1384
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
P
C
T
a
1.2
1.50
I
C
V
CE
T
a
=
25°C
I
C
I
B
1.2
V
CE
=
10 V
T
a
=
25°C
Collector power dissipation P
C
(W)
1.0
1.25
Collector current I
C
(A)
0.8
1.00
Collector current I
C
(A)
I
B
=
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
1.0
0.8
0.6
0.75
0.6
0.4
0.50
3 mA
2 mA
0.4
0.2
0.25
1 mA
0.2
0
0
0
40
80
120
160
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
V
BE(sat)
I
C
100
h
FE
I
C
600
V
CE
=
10 V
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
I
C
/ I
B
=
10
1
T
a
=
75°C
25°C
10
Forward current transfer ratio h
FE
500
400
0.1
−25°C
25°C
T
a
= −25°C
75°C
1
300
T
a
=
75°C
200
25°C
−25°C
0.01
0.1
100
0.001
0.01
0.1
1
10
0.01
0.01
0.1
1
10
0
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
200
V
=
10 V
CB
T
a
=
25°C
50
C
ob
V
CB
120
V
CER
R
BE
Collector-emitter voltage
(V)
(Resistor between B and E) V
CER
I
E
=
0
f
=
1 MHz
T
a
=
25°C
Collector output capacitance C
ob
(pF)
(Common base circuited)
I
C
=
10 mA
T
a
=
25°C
Transition frequency f
T
(MHz)
100
160
40
80
120
30
60
2SC1384
80
20
40
2SC1383
40
10
20
0
−1
−10
−100
0
1
10
100
0
0.1
1
10
100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3
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