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2SC1213_11 参数 Datasheet PDF下载

2SC1213_11图片预览
型号: 2SC1213_11
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 281 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SC1213_11的Datasheet PDF文件第2页  
2SC1213, 2SC1213A
Elektronische Bauelemente
NPN
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low frequency amplifier
Complementary pair with 2SA673 and 2SA673A
G
H
TO-92
CLASSIFICATION OF h
FE(1)
Product-Rank
Product-Rank
Range
2SC1213-B
2SC1213A-B
60~120
2SC1213-C
2SC1213A-C
100~200
2SC1213-D
2SC1213A-D
160~320
K
A
1
Emitter
2
Collector
3
Base
J
D
REF.
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
B
E
C
F
A
B
C
D
E
F
G
H
J
K
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
2SC1213
2SC1213A
2SC1213
2SC1213A
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
35
50
35
50
4
500
400
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown 2SC1213
Voltage
2SC1213A
Collector to Emitter
Breakdown Voltage
Collector Cut - Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
2SC1213
2SC1213A
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE (1)
h
FE (2)
V
CE(sat)
Min.
35
50
35
50
4
-
60
10
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
-
0.5
320
-
0.6
Unit
V
V
V
µA
Test Conditions
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=3V, I
C
=10mA
V
CE
=3V, I
C
=500mA
Emitter to Base Breakdown Voltage
V
I
C
=150mA, I
B
=15mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. D
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