2SC1162
Elektronische Bauelemente
2.5A , 35V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-126
Low frequency power amplifier
Emitter
Collector
Base
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
2SC1162-B
60~120
2SC1162-C
100~200
2SC1162-D
A
160~320
E
F
B
C
L
K
N
M
J
H
D
Collector
G
REF.
Base
Emitter
A
B
C
D
E
F
G
Millimeter
Min.
Max.
7.40
7.80
2.50
2.90
10.60
11.00
15.30
15.70
3.70
3.90
3.90
4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.10
1.50
0.45
0.60
0.66
0.86
2.10
2.30
1.17
1.37
3.00
3.20
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
35
35
5
2.5
750
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
f
T
V
BE
Min.
35
35
5
-
-
60
20
-
-
-
Typ.
-
-
-
-
-
-
-
-
180
-
Max.
-
-
-
20
20
320
-
1
-
1.5
Unit
V
V
V
μA
μA
Test Conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.5A*
I
C
=2A, I
B
=200mA
V
CE
=2V, I
C
=200mA
V
CE
=2V, I
C
=1.5A
V
MHz
V
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Mar-2011 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
