2SB772L
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-251
6.6
±0.2
5.3
±0.2
2.3
±0.1
0.5
±0.05
PNP Type
Epitaxial Transistors
Description
The 2SB772L os designed for using in output stage of
10W amplifier, voltage regulator, DC-DC converter and
relay driver.
5.6
±0.2
7.0
±0.2
1.2
±0.3
0.75
±0.15
7.0
±0.2
0.6
±0.1
2.3
REF.
0.5
±0.1
G
D
S
Dimensions in millimeters
MAXIMUM RATINGS* (T
amb
=25 C, unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
o
Parameter
Value
-40
-30
-5
-3
-7
-0.6
10
-55~+150
Units
V
V
V
A
A
W
O
I
C
I
B
P
D
T
J,
T
stg
Total Power Dissipation
Junction and Storage Temperature
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
*V
CE
(sat)
*V
BE
(sat)
*h
FE
1
*h
FE
2
fT
C
ob
Min
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Max
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=- 3V,I
C
=0
I
C
=- 2 A,I
B
=-0.2 A
I
C
=- 2 A,I
B
=-0.2 A
V
CE
=- 2 V, I
C
=-20 mA
V
CE
=- 2 V, I
C
=-20
mA
MH z
V
CE
=- 5 V, I
C
=-0.1mA, f=100MHz
,
pF
V
CB
=-10 V , f=1MHz,I
E
=0
*Pulse test: Pulse width
≦
380
µ
s, Duty Cycle
≦
2%
Classification of hFE
Rank
Range
Q
100~200
R
160~320
S
250~500
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of
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SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
