2SB772
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Type
Plastic Encapsulate Transistors
Features
* Power Dissipation:
P
CM
: 625 mW (Tamb=25
o
C)
4.55
±0.2
TO-92
3.5
±0.2
4.5
±0.2
o
MAXIMUM RATINGS* T
A
=25
C
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-40
-30
-6
-3
0.625
150
-55~150
Units
V
V
V
A
W
o
14.3
±0.2
0.46
+0.1
–0.1
(1.27 Typ.
)
1 2 3
1.25
–0.2
+0.2
0.43
+0.08
–0.07
C
C
o
1: Emitter
2: Collector
3: Base
2.54
±0.1
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
h
FE
（
2
）
V
CE
(sat)
V
BE
(sat)
unless
Test
otherwise
specified）
TYP
MAX
UNIT
V
V
V
-1
-10
-1
60
32
-0.5
-1.5
50
V
V
MHz
400
μA
μA
μA
-40
-30
-6
conditions
I
B
=0
MIN
Ic=-100μA
，I
E
=0
I
C
= -10 mA ,
I
E
= -100
μA，I
C
=0
V
CB
= -40 V , I
E
=0
V
CE
=-30 V , I
B
=0
V
EB
=-6V ,
I
C
=0
V
CE
= -2V, I
C
= -1A
V
CE
=-2V, I
C
= -100mA
I
C
=-2A,
I
C
=-2A,
I
B
= -0.2A
I
B
= -0.2A
I
C
=-0.1A
f
T
V
CE
= -5V,
f =
10MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
http://www.SeCoSGmbH.com/
01-Jun-2005 Rev.
B
Any changing of specification will not be informed individual
Page 1 of
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SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
