2SB772Q
Elektronische Bauelemente
RoHS Compliant Product
D
D1
A
PNP Silicon
Medium Power Transistor
SOT-89
E1
FEATURES
Power dissipation
P
CM
: 500mW Tamb=25
1.BASE
Collector current
2.COLLECTOR
A
I
CM
: -3
3.EMITTER
Collector-base voltage
V
V
B(BR)CBO
: -40
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
b1
b
L
E
e
e1
C
Dimensions In Millimeters
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
2.900
0.900
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
3.100
1.100
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
Min
Dimensions In Inches
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.060TYP
0.114
0.035
0.122
0.043
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
ELECTRICAL CHARACTERISTICS
Tamb=25
unlessotherwise
specified CLASSIFICATION OF
h
FE(1)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
1
Test
conditions
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
B
=0
I
C
=0
MIN
-40
-30
-6
TYP
MAX
UNIT
V
V
V
Ic=-100 A
I
C
= -10 mA ,
I
E
= -100
A
V
CB
= -40 V ,
V
CE
=-30 V ,
V
EB
=-6V ,
-1
-10
-1
60
32
-0.5
-1.5
400
A
A
A
V
CE
= -2V, I
C
= -1A
V
CE
=-2V, I
C
= -100mA
I
C
=-2A,
I
C
=-2A,
I
B
= -0.2A
I
B
= -0.2A
I
C
=-0.1A
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
2
V
CE
(sat)
V
BE
(sat)
V
V
V
CE
= -5V,
Transition frequency
f
T
f =
10MHz
50
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
http://www.SeCoSGmbH.com
R
60-120
O
100-200
Y
160-320
GR
200-400
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
