2SB649/2SB649A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Type
Plastic Encapsulate Transistors
TO-126C
8.0
±0.2
2.0
±0.2
4.14
±0.1
3.2
±0.2
FEATURES
Power smplifier applications
Power dissipation
P
CM
:
1 W
（Tamb=25℃）
Collector current
I
CM
:
- 1.5 A
Collector-base voltage
V
(BR)CBO
: -180 V
Collector-emitter voltage
V
CEO
2SB649 : -120 V
2SB649A : -160 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
*
V
BE
*
V
CE
=- 5V, I
C
= -500mA
I
C
=- 500 mA, I
B
=- 50mA
V
CE
=- 5V,I
C
=-150mA
,,
V
CE
=-5V I
C
=- 150 mA
V
CB
=-10 V , I
E
=0,f=1MHz
11.0
±0.2
1
2
3
O2.8
±0.1
O
3.2
±0.1
1.4
±0.1
1.27
±0.1
15.3
±0.2
0.76
±0.1
2.28 Typ.
4.55
±0.1
0.5
± 0.1
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
unless
Test
otherwise
specified）
MIN
-180
MAX
UNIT
V
V
V
-10
-10
conditions
Ic=-1mA
，
I
E
=0
Ic=-10mA
，
I
B
=0
I
E
=-1mA， I
c
=0
V
CB
=- 160 V, I
E
=0
V
EB
= -4V ,
I
C
=0
2SB649
2SB649A
2SB649
2SB649A
-120
-160
-5
μ
A
μ
A
V
CE
= -5V, I
C
= -150 mA
60
60
30
320
200
-1
-1.5
140
27
V
V
MHz
pF
f
T
C
ob
*
The 2SB649 and 2SB649A are grouped by h
FE1
as follows.
Rank
2SB649
2SB649A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
----
Any changing of specification will not be informed individual
Page 1 of
2
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
