2SB649/2SB649A
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
Maximum Collector Dissipation
Curve
30
Collector power dissipation P
C
(W)
–3
I
Cmax
Collector current I
C
(A)
–1.0
Area of Safe Operation
(–13.3 V, –1.5 A)
20
(–40 V, –0.5 A)
–0.3
–0.1
DC Operation (T
C
= 25°C)
10
–0.03
2SB649
–0.01
–1
(–120 V, –0.038 A)
(–160 V, –0.02 A)
2SB649A
0
50
100
Case temperature T
C
(°C)
150
–3
–10
–30
–100 –300
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
–1.0
.5
–5
Typical Transfer Characteristics
–500
V
CE
= –5 V
Collector current I
C
(mA)
–100
Collector current I
C
(A)
–0.8
Ta = 75
°
C
0
I
C
= 10 I
B
–0.6
–2.0
–1.5
–0.4
–1.0
–10
–0.2
–0.5 mA
I
B
= 0
0
–30
–50
–10
–20
–40
Collector to emitter voltage V
CE
(V)
–1
–0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage V
BE
(V)
DC Current Transfer Ratio
vs. Collector Current
V
CE
= –5V
Ta = 75
°C
25
°C
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector to emitter saturation voltage
V
CE(sat)
(V)
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
350
DC current transfer ratio h
FE
350
250
200
150
100
50
–25°C
25
–25
0
5.
–
–4.5
.0
–4
.5
–3
0
–3.
–2.5
T
C
= 25°C
Ta
–10
–100
Collector current I
C
(mA)
=7
–25
25
–1,000
0
–1
–10
–100
–1,000
Collector current I
C
(mA)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
2of 2
5
°
C
P
C
=
20
W
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
