2SB1440
Elektronische Bauelemente
-2 A, -50 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
Low collector-emitter saturation voltage V
CE(sat)
For low-frequency output amplification
Complements to 2SD2185
A
E
4
B C
1 2
E
3
C
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
LeaderSize
7’ inch
B
F
G
H
J
K
L
D
CLASSIFICATION OF h
FE1
Product
Range
Marking
2SB1440-R
120 - 240
1L
2SB1440-S
170 - 340
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-50
-50
-5
-2
0.5
150, -55~150
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
OB
Min.
-50
-50
-5
-
-
120
60
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
80
-
Max.
-
-
-
-1
-1
340
-
-0.3
-1.2
-
60
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I
C
= -10μA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10μA, I
C
=0
V
CB
= -50V, I
E
=0
V
EB
= -5 V, I
C
=0
V
CE
= -2V, I
C
= -200mA
V
CE
= -2V, I
C
= -1A
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CE
= -10V, I
C
= -50mA,
f=200MHz
V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Mar-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
