2SB1322A
Elektronische Bauelemente
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
Allow Supply with The Radial Taping
G
H
J
Emitter
Collector
Base
D
REF.
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
CLASSIFICATION OF h
FE (1)
Product-Rank
2SB1322A-Q 2SB1322A-R 2SB1322A-S
Range
85~170
120~240
170~340
K
A
B
E
C
F
A
B
C
D
E
F
G
H
J
K
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-60
-50
-5
-1
0.625
200
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector-Base Capacitance
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
C
cb
f
T
Min
-60
-50
-5
-
-
85
50
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
200
Max
-
-
-
-0.1
-0.1
340
-
-0.4
-1.2
30
-
Unit
V
V
V
μA
μA
Test condition
I
C
= -0.01mA, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -0.01mA, I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -10V, I
C
= -0.5A
V
CE
= -5V, I
C
= -1A
V
V
pF
MHz
I
C
= -0.5A, I
B
= -0.05A
I
C
= -0.5A, I
B
= -0.05A
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -10V, I
C
= -0.05A, f=200MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
