2SB1218A
Elektronische Bauelemente
-0.1A , -60V
PNP Silicon Epitaxial Paner Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATIONS
General Purpose Amplification
A
L
3
SOT-323
FEATURES
3
High DC Current Gain
Complementary to 2SD1819A
K
Top View
1
2
C B
1
2
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SB1218A-Q
160~260
BQ1
2SB1218A-R
210~340
BR1
2SB1218A-S
290~460
BS1
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
1.80
2.20
1.80
1.15
0.80
1.20
0.20
2.45
1.35
1.10
1.40
0.40
H
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
-
0.25
-
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
0.650 TYP.
F
Collector
Base
Emitter
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-45
-45
-7
-100
150
833
150, -55 ~ 150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-45
-45
-7
-
-
-
160
-
-
-
Typ.
-
-
-
-
-
-
-
-
80
2.7
Max.
-
-
-
-100
-100
-100
460
-0.5
-
-
Unit
V
V
V
nA
μA
nA
V
MHz
pF
Test Conditions
I
C
= -10μA, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -10μA, I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -10V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
= -10V, I
C
= -2mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
E
=1mA, f=200MHz
V
CB
= -10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
