2SB1197
Elektronische Bauelemente
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low V
CE(sat)
.V
CE(sat)
≦-0.5V(I
C
/ I
B
= -0.5A /-50mA)
I
C
=-0.8A
Complements of the 2SD1781
A
L
3
SOT-23
3
Top View
C B
1
2
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SB1197-P
82~180
AHP
2SB1197-Q
120~270
AHQ
2SB1197-R
180~390
AHR
F
K
1
E
D
G
H
J
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
Ratings
-40
-32
-5
-800
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
OB
Min.
-40
-32
-5
-
-
-
82
50
-
Typ.
-
-
-
-
-
-
-
200
12
Max.
-
-
-
-0.5
-0.5
-0.5
390
-
30
Unit
V
V
V
μA
μA
V
Test Conditions
I
C
=-50μA, I
E
= 0
I
C
=-1mA, I
B
= 0
I
E
=-50μA, I
C
= 0
V
CB
=-20V, I
E
= 0
V
EB
= -4V, I
C
= 0
I
C
=-500mA, I
B
=-50mA
V
CE
=-3V, I
C
=-100mA
MHz
pF
V
CE
=-5V, I
C
=-50mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
