2SB1197K
Elektronische Bauelemente
- 32V, - 0.8A
Low Frequency Transistor
ELECTRICAL CHARACTERISTICS (Ta = 25
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
Min.
- 40
- 32
-5
-
-
-
120
50
-
)
Typ.
-
-
-
-
-
-
-
200
12
Max.
-
-
-
- 0.5
- 0.5
- 0.5
390
-
30
UNIT
V
V
V
µA
µA
V
-
MHz
pF
TEST CONDITIONS
I
C
= 50µA
I
C
= 1mA
I
E
= 50µA
V
CB
= 20V
V
EB
= 4V
I
C
/ I
B
= 0.5A / 50mA
V
CE
= 3V, I
C
= 100mA
V
CE
= 5V, I
E
= 50mA,
f = 100MHz
V
CB
= 10V, I
E
= 0A,
f = 1MHz
h
FE
VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM
hFE
Marking
Q
120 ~ 270
AHQ
R
180 ~ 390
AHR
ELECTRICAL CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
