2SB1188
Elektronische Bauelemente
-2A, -40V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SB1188 is designed for medium poweramplifier applications.
SOT-89
4
1
2
FEATURES
Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
RoHS Compliant Product
B
3
C
A
E
D
F
G
H
K
J
L
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SB1188-P
82~180
BCP
2SB1188-Q
120~270
BCQ
2SB1188-R
180~390
BCR
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
LeaderSize
7’ inch
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
0
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
-40
-32
-5
-2
Unit
V
V
V
A
W
°C
0.5 (2.0*)
150, -55~150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min.
-40
-32
-5
-
-
Typ.
-
-
-
-
-
-500
-
150
50
Max.
-
-
-
-1
-1
-800
390-
-
-
Unit
V
V
V
μA
μA
mV
MHz
pF
Test Conditions
IC=-50µA , IE=0
I
C
= -1mA, I
B
=0
I
E
= -50µA, I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -4V, I
C
=0
I
C
=--2A, I
B
= -200mA
V
CE
= -3V, I
C
= -500mA
V
CE
= -5V, I
C
= -500mA, f=30MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE(sat)
h
FE
f
T
C
OB
-
82
-
-
Pulse Test: Pulse Width
≦
380µs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010
Rev. D
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
