2SB1132
Elektronische Bauelemente
-1A, -40V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low power dissipation 0.5W
SOT-89
4
MARKING
1132
Date Code
1 2
3
A
E
C
B
D
F
G
H
J
K
L
CLASSIFICATION OF h
FE
Product Rank
Range
2SB1132-P
82~180
2SB1132-Q
120~270
2SB1132-R
180~390
REF.
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
LeaderSize
7’ inch
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
0
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-40
-32
-5
-1
500
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-40
-32
-5
-
-
82
-
-
-
Typ.
-
-
-
-
-
-
-0.2
150
20
Max.
-
-
-
-0.5
-0.5
390
-0.5
-
30
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
I
C
= -50µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -50µA, I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -3V, I
C
= -100mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -5V, I
C
= -50mA, f=30MHz
V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010
Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
