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2SB1068 参数 Datasheet PDF下载

2SB1068图片预览
型号: 2SB1068
PDF下载: 下载PDF文件 查看货源
内容描述: PNP塑料封装晶体管 [PNP Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管放大器
文件页数/大小: 1 页 / 79 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2SB1068
Elektronische Bauelemente
-2A , -20V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G
H
Low Collector Saturation Voltage
High DC Current Gain
High Collector Power Dissipation
Complementary of the 2SD1513
J
A
B
K
D
Emitter
Collector
Base
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
REF.
A
B
C
D
E
F
G
H
J
K
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
2SB1068-L
135~270
2SB1068-K
200~400
2SB1068-U
300~650
E
C
F
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-20
-16
-6
-2
0.625
200
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)
V
BE
C
cb
f
T
Min
-20
-16
-6
-
-
135
100
-
-
-
-
-0.55
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
60
-
Max
-
-
-
-0.1
-0.1
650
-
-0.4
-0.5
-0.5
-1.2
-0.65
-
-
Unit
V
V
V
μA
μA
Test condition
I
C
= -0.1mA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -0.1mA, I
C
=0
V
CB
= -16V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1.5A
V
V
V
V
V
pF
MHz
I
C
= -1A, I
B
= -10mA
I
C
= -1.5A, I
B
= -20mA
I
C
= -1.5A, I
B
= -75mA
I
C
= -1.5A, I
B
= -75mA
V
CE
= -6V, I
C
= -5mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -10V, I
C
= -50mA
Any changes of specification will not be informed individually.
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter voltage
Collector-Base Capacitance
Transition Frequency
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
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