2SA821
Elektronische Bauelemente
-0.03A , -210 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G
H
High Breakdown Voltage
Low Transition Frequency
CLASSIFICATION OF h
FE
Product-Rank
2SA821-N
Range
56~120
2SA821-P
82~180
2SA821-Q
82~180
K
J
A
B
D
Emitter
Collector
Base
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-210
-210
-5
-30
250
500
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min
-210
-210
-5
-
-
56
-
-
-
Typ
-
-
-
-
-
-
-
50
8
Max
-
-
-
-1
-1
270
-0.6
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test condition
I
C
= -0.05mA, I
E
=0
I
C
= -0.1mA, I
B
=0
I
E
= -0.05mA, I
C
=0
V
CB
= -150V, I
E
=0
V
EB
= -4.5V, I
C
=0
V
CE
= -3V, I
C
= -5mA
I
C
= -2mA, I
B
= -0.2mA
V
CE
= -5V, I
C
= -2mA
V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
