2SA812K
Elektronische Bauelemente
-50 V, -100 mA
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Complementary to 2SC1623K
High DC Current Gain: h
FE
= 200 TYP. (V
CE
= -6V, I
C
= -1mA)
High Voltage: V
CEO
= -50V
PACKAGE DIMENSIONS
SOT-23
3
Collector
1
Base
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
2
Emitter
A
L
3
H
K
B S
2
J
J
K
C
Top View
1
L
S
V
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM
RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
Ratings
-60
-50
-5
-100
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
I
CBO
I
EBO
*V
CE(sat)
V
BE
h
FE
f
T
C
ob
Min.
-60
-50
-5
-
-
-
-0.58
90
-
-
Typ.
-
-
-
-
-
-
-
-
180
4.5
Max.
-
-
-
-100
-100
300
-0.68
600
-
-
Unit
V
V
V
nA
nA
mV
V
I
C
=-100uA
I
C
=-1mA
I
E
=-100uA
V
CB
=-60V
V
EB
=-5V
Test Conditions
I
C
=100mA, I
B
=10mA
I
C
= -1mA, V
CE
= -6V
V
CE
=-6V, I
C
=-1mA
MHz
pF
V
CE
=-6V, I
C
=-10mA
V
CB
= -10V, f = 1 MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
90 - 180
M4
Y
135 - 270
M5
G
200 - 400
M6
B
300 - 600
M7
01-June-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
