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2SA733_11 参数 Datasheet PDF下载

2SA733_11图片预览
型号: 2SA733_11
PDF下载: 下载PDF文件 查看货源
内容描述: PNP塑料封装晶体管 [PNP Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 417 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SA733_11的Datasheet PDF文件第2页  
2SA733
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-60 V, -150mA
PNP Plastic Encapsulated Transistor
FEATURES
Complementary of the 2SC945
Collector to base voltage: -60V
A
L
3
SOT-23
MARKING
Product
2SA733
Marking Code
CS
1
3
Top View
2
C B
1
2
K
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
2SA733-L
120~220
2SA733-H
200~475
F
G
H
J
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-5
-150
200
150, -55 ~ 150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
ob
NF
Min.
-60
-50
-5
-
-
120
-
-0.58
50
-
-
Typ.
-
-
-
-
-
-
-0.18
-0.62
-
4.5
6
Max.
-
-
-
-0.1
-0.1
475
-0.3
-0.68
-
7
20
Unit
V
V
V
µA
µA
V
V
MHz
pF
dB
Test Conditions
I
C
= -5µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -50µA, I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -1.0mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -0.3mA, f=100Hz,
R
G
=10K
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. D
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