2SA733T
Elektronische Bauelemente
-60 V, -150 mA
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power dissipation
G
H
TO-92
1Emitter
2Collector
3Base
PACKAGE INFORMATION
Weight: 0.2100g (Approximately)
A
J
D
B
REF.
Collector
2
K
3
Base
E
C
F
1
Emitter
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction, Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-5
-100
250
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25℃
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE
h
FE
f
T
C
ob
NF (noise figures)
unless otherwise specified)
Min.
-60
-50
-5
-
-
-
-0.58
90
100
-
-
Typ.
-
-
-
-
-
-0.18
-0.62
200
-
-
-
Max.
-
-
-
-100
-100
-0.30
-0.68
600
-
6
20
Unit
V
V
V
nA
nA
V
V
MHz
pF
dB
I
C
=-50uA, I
E
= 0
I
C
=-1mA, I
B
= 0
I
E
=-50uA, I
C
= 0
V
CB
=-60V, I
E
= 0
V
EB
=-5V, I
C
= 0
Test Conditions
I
C
=-100mA, I
B
=-10mA
V
CE
= -6V, I
C
= -1.0mA
V
CE
=-6V, I
C
=-1mA
V
CE
=-6V, I
C
=-10mA
V
CB
= -10V, I
E
= 0, f = 1 MHz
V
CE
=-6V, I
C
=-0.3mA, Rg=10kΩ, f=100HZ
CLASSIFICATION OF h
FE
Rank
Range
R
90 - 180
Q
135 - 270
P
200 - 400
K
300 - 600
01-June-2005 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
