2SA684
Elektronische Bauelemente
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Automatic insertion by radial taping possible.
Complementary pair with 2SC1384L.
G
H
TO-92L
1
Emitter
2
Collector
3
Base
J
A
D
CLASSIFICATION OF h
FE
Product-Rank
Range
2SA684-Q
85~170
2SA684-R
120~240
2SA684-S
170~340
K
B
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.70
5.10
7.80
8.20
13.80
14.20
3.70
4.10
0.35
0.55
0.35
0.45
1.27 TYP.
1.28
1.58
2.44
2.64
0.60
0.80
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-5
-1
1
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
C
Ob
Min.
-60
-50
-5
-
85
50
-
-
-
-
Typ.
-
-
-
-
Max.
-
-
-
-0.1
340
Unit
V
V
V
µA
Test Conditions
I
C
= -10µA, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -20V, I
E
=0
V
CE
= -10V, I
C
= -500mA
V
CE
= -5V, I
C
= -1A
-
-0.2
-0.85
200
20
-
-0.4
-1.2
-
30
V
V
MHz
pF
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -10V, I
E
=50mA , f=200MHz
V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
