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2SA684 参数 Datasheet PDF下载

2SA684图片预览
型号: 2SA684
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管 [PNP Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 232 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SA684的Datasheet PDF文件第2页浏览型号2SA684的Datasheet PDF文件第3页  
2SA684
Elektronische Bauelemente
RoHS Compliant Product
PNP Transistor
FEATURES
A suffix of "-C" specifies halogen & lead-free
TO-92L
Automatic insertion by radial taping possible.
Complementary pair with 2SC1384.
2
1. EMITTER
3
2. COLLECTOR
3
.
BASE
1 2
3
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
1
Value
-60
-50
-5
-1
1
-55-150
Units
V
V
V
A
W
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=-5V, I
C
=-1A
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
E
=50mA, f=200MHz
V
CB
=-10V, I
E
=0, f=1MHz
50
-0.2
-0.85
200
20
30
-0.4
-1.2
V
V
MHz
pF
Test
unless
otherwise
specified)
MIN
-60
-50
-5
-0.1
85
340
TYP
MAX
UNIT
V
V
V
µA
conditions
Ic=-10uA, I
E
=0
Ic=-2mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-10V, I
C
=-500mA
CLASSIFICATION OF
Rank
Range
http://www.SeCoSGmbH.com
h
FE(1)
Q
85-170
R
120-240
S
170-340
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3