2SA673/673A
Elektronische Bauelemente
PNP Silicon
Plastic-Encapsulate Transistor
TO-92
4.55
±0.2
4.5
±0.2
3.5
±0.2
FEATURES
* Low Frequency Amplifier
* Complementary Pair with 2SC1213
and 2SC1213A
* RoHS Compliant Product
* A suffix of "-C" specifies halogen-free
(1.27 Typ.)
1.25
±0.2
14.3
±0.2
1 2 3
2.54
±0.1
1: Emitter
2: Base
3: Collector
0.43
+0.08
0.46
±0.1
–0.07
MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Symbol
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
o
o
Parameter
2SA673
2SA673A
2SA673
2SA673A
Value
-35
-50
-35
-50
-4
-500
400
150
-55-150
Units
V
V
V
mA
mW
o
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
C
C
o
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
*
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
* Pulse test.
*
V
CEsat
V
BE
Test
conditions
2SA67 3
2SA673A
2SA673
2SA673A
MIN
-35
-50
-35
-50
-4
-0.5
60
10
-0.6
-0.64
V
V
320
TYP
MAX
UNIT
V
V
V
µA
I
C
=-10µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
= -20 V, I
E
=0
V
CE
=-3V, I
C
= -10mA
V
CE
=-3V, I
C
=-500mA
I
C
= -150mA, I
B
=-15mA
V
CE
=-3V, I
C
=-10mA
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
CLASSIFICATION OF h
FE(1)
Rank
Range
B
60-120
C
100-
200
D
160-320
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of
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SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
