2SA1980
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-150 mA, -50 V
PNP Plastic Encapsulated Transistor
FEATURES
Low collector saturation voltage: V
CE(sat)
=-0.3V(Max.)
Low output capacitance : C
ob
=4pF (Typ.)
Complements of the 2SC5343
G
H
TO-92
J
CLASSIFICATION OF h
FE
Product-Rank
Range
2SA1980-O
70~140
2SA1980-Y
120~240
2SA1980-G
200~400
2SA1980-L
300~700
K
1
Emitter
2
Collector
3
Base
D
A
B
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
-50
-50
-5
-150
625
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
NF
Min.
-50
-50
-5
-
-
70
-
80
-
-
Typ.
-
-
-
-
-
-
-
-
4
-
Max.
-
-
-
-0.1
-0.1
700
-0.30
-
7
10
Unit
V
V
V
µA
µA
V
MHz
pF
dB
Test Conditions
I
C
=-100µA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-50 V, I
E
=0
V
EB
=-5 V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA, f=1KHz,
R
S
=10K
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
