2SA1832
Elektronische Bauelemente
-0.15A , -50V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current
Excellent h
FE
Linearity
Complementary to 2SC4738
A
M
3
SOT-523
3
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1832-Y
120~240
SY
2SA1832-GR
200~400
SG
F
K
Top View
1
2
C B
1
2
L
E
D
G
H
J
PACKAGE INFORMATION
Package
SOT-523
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.5
1.7
1.45
1.75
0.75
0.85
0.7
0.9
0.9
1.1
0.15
0.25
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25
0.325
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-50
-50
-5
-150
100
125
-55~125
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut - off Current
Emitter Cut - off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-50
-50
-5
-
-
120
-
80
-
Typ.
-
-
-
-
-
-
-
-
4
Max.
-
-
-
-100
-100
400
-0.3
-
7
Unit
V
V
V
nA
nA
Test Conditions
I
C
= -100A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100A, I
C
=0
V
CB
= -50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -2mA
V
MHz
pF
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
= -1mA
V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Jan-2011 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
