2SA1577
Elektronische Bauelemente
-0.5A, -40V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complements of the 2SC4097
Large I
C
, MAX=-500mA
Low V
CE(sat)
. Ideal for low-voltage operation.
A
L
3
SOT-323
3
CLASSIFICATION OF h
FE
1
Top View
2
C B
1
2
Product-Rank
Range
Marking
2SA1577-P
82~180
HP
2SA1577-Q
120~270
HQ
2SA1577-R
180~390
HR
K
E
D
F
G
H
J
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
1.80
1.15
0.80
1.20
0.20
2.20
2.45
1.35
1.10
1.40
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
J
, T
STG
Ratings
-40
-32
-5
-500
200
150, -55 ~ 150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-40
-32
-5
-
82
-
-
-
Typ.
-
-
-
-
-
-
200
7
Max.
-
-
-
-1
-1
390
-0.4
-
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-3V, I
C
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-5V, I
C
=-20mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Jan-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
