2SA1576F
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
Feature
·
Complements
the 2SC4081F
SOT-323
Dim
A
A
Min
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Max
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
B
L
B S
COLLECTOR
C
D
2
3
3
Top View
1
BASE
1
G
H
J
K
V
2
EMITTER
1
2
3
G
C
D
H
K
J
L
S
V
Marking Code: 5AX
X = hFE Rank Code
All Dimension in mm
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
-60
-50
-6
-150
225
V
V
V
mA
mW
Unit
Characteristics
at Ta = 25
Parameter
Collector -Base Breakdown Voltage
Collector -Emitter Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector -Emitter Breakdown Voltage
Emitter -Base Cutoff Current
Collector Saturation Voltage 1
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
fT
Cob
Min
-60
-50
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
140
4.0
Max
-
-
-
-100
-100
-500
560
-
5.0
Unit
V
V
V
nA
nA
mV
-
MHz
pF
Test Conditions
I
C
=-50uA
I
C
=-1mA
I
E
=-50uA
V
CB
=-60V
V
EB
=-6V
I
C
=-50mA, I
B
=-5mA
V
CE
=-6V, I
C
=-1mA
V
CE
=-12V, I
E
=-2 mA, f=100MHz
V
CB
=-12V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width = 380us, Duty Cycle = 2%
Classification of h
FE
Rank
Q
R
S
Range
120 - 270
180 - 390
270 - 560
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
