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2SA1298 参数 Datasheet PDF下载

2SA1298图片预览
型号: 2SA1298
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅塑封晶体管 [PNP Silicon Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 79 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2SA1298
Elektronische Bauelemente
-0.8A , -35V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Frequency Power Amplifier Application
Power Switching Applications
A
3
SOT-23
L
3
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
Marking
2SA1298-O
100~200
IO
2SA1298-Y
160~320
IY
F
1
Top View
2
C B
1
2
K
E
D
G
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Collector


Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-35
-30
-5
-800
200
625
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
V lt
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
C
ob
Min.
-35
-30
-5
-
-
100
40
-0.5
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
13
Max.
-
-
-
-0.1
-0.1
320
-
-0.8
-0.5
-
-
Unit
V
V
V
A
A
Test Conditions
I
C
= -1mA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
V
V
MHz
pF
I
C
= -500mA, I
B
= -20mA
V
CB
= -1V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
Page 1 of 1
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A