2SA1235A
Elektronische Bauelemente
-0.2A , -60V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Collector Current
Low Collector Power Dissipation
A
3
SOT-23
L
3
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
Marking
2SA1235A-ME
150~300
M‧E
2SA1235A-MF
250~500
M‧F
F
K
Top View
1
2
C B
1
2
E
D
G
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-60
-50
-6
-200
200
625
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min.
-60
-50
-6
-
-
150
90
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
4
Max.
-
-
-
-100
-100
500
-
-0.3
-1
-
-
Unit
V
V
V
nA
nA
Test Conditions
I
C
= -100A, I
E
=0
I
C
= -0.1mA, I
B
=0
I
E
= -100A, I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -0.1mA
V
V
MHz
pF
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -6V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
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