2SA1162
Elektronische Bauelemente
-0.15A, -50V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
SOT-23
A
3
Low Noise: NF=1 dB(Typ.), 10 dB(Max.)
Complements of the 2SC2712
L
3
MECHANICAL DATA
Top View
1
2
Case: SOT-23, Molded Plastic
Weight: 0.008 grams(approx.)
C B
1
2
K
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1162-O
70~140
SO
2SA1162-Y
120~240
SY
2SA1162-GR
200~400
SG
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Device Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
-50
-50
-5
-150
150
125, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Noise Figure
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
NF
Min.
-50
-50
-5
-
-
-
70
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.3
400
-
7
10
Unit
V
V
V
μA
μA
V
MHz
pF
dB
Test Conditions
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
= -5V, I
C
=0
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-2mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CB
=-6V, I
C
=0.1mA, f=1MHz, Rg=10KΩ
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
