2SA1036
Elektronische Bauelemente
-0.5A, -40V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
I
C
Max.= -500 mA
Low V
CE(sat)
. Ideal for low-voltage operation.
A
L
3
SOT-23
3
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1036-P
82~180
HP
2SA1036-Q
120~270
HQ
2SA1036-R
180~390
HR
F
1
Top View
2
C B
1
2
K
E
D
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
-40
-32
-5
-500
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
OB
Min.
-40
-32
-5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
200
7
Max.
-
-
-
-1
-1
-0.4
390
-
-
Unit
V
V
V
μA
μA
V
Test Conditions
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
= -4V, I
C
=0
I
C
=-100mA, I
B
=-10mA
V
CE
=-3V, I
C
=-10mA
MHz
pF
V
CE
=-5V, I
C
=-20mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
