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2SA1020_10 参数 Datasheet PDF下载

2SA1020_10图片预览
型号: 2SA1020_10
PDF下载: 下载PDF文件 查看货源
内容描述: PNP塑料封装晶体管 [PNP Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 422 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SA1020_10的Datasheet PDF文件第2页浏览型号2SA1020_10的Datasheet PDF文件第3页  
2SA1020
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-2A, -50V
PNP Plastic Encapsulated Transistor
FEATURES
Power amplifier applications
N
G
TO-92MOD
H
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
2SA1020-O
70-140
2SA1020-Y
120-240
Emitter
Collector
Base
M
L
A
J
D
B
K
E
Collector
F
C


Base
REF.
A
B
C
D
E
F
G

Emitter
Millimeter
Min.
Max.
5.50
6.50
8.00
9.00
12.70
14.50
4.50
5.30
0.35
0.65
0.30
0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.70
2.05
2.70
3.20
0.85
1.15
1.60 Max
0.00
0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-50
-50
-5
-2
900
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Storage Time
Fall Time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
T
on
T
s
T
f
Min.
-50
-50
-5
-
-
70
40
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
40
0.1
1
0.1
Max.
-
-
-
-1
-1
240
-
-0.5
-1.2
-
-
-
-
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
= -100μA, I
E
= 0A
I
C
= -10mA, I
B
= 0A
I
E
= -100μA, I
C
= 0A
V
CB
= -50 V, I
E
= 0 A
V
EB
= -5 V, I
C
= 0 A
V
CE
= -2V, I
C
= -0.5A
V
CE
= -2V, I
C
= -1.5A
V
V
MHz
pF
μs
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CB
= -10V, I
E
= 0 A, f=1MHz
V
CC
= -30V
I
B1
= -I
B2
= -0.05A
I
C
= -1A
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
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