2SA1036
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
3
Collector
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
FEATURES
. Large I
C
, I
C
MAX
.=-500mA
1
2
A
L
3
3
1
Base
2
B S
2
. Low V
CE(Sat)
, Ideal for low-voltage operation
. Small Package.
V
Top View
1
Emitter
H
J
K
L
S
G
C
. RoHS Compliant Product
H
V
K
J
(MAXIMUM
RATINGS* T
A
=25℃
)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
stg
D
All Dimension in mm
Parameter
Value
-40
-32
-5
-500
150
-55~125
Units
V
V
V
mA
mW
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction and Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
otherwise
specified)
MIN
-40
-32
-5
-1
-1
82
390
-0.4
200
7
V
MHz
pF
TYP
MAX
UNIT
V
V
V
uA
uA
conditions
Ic=-100u A,I
E
=0
Ic=-1mA,I
B
=0
I
E
=-100 u A,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-10mA
I
C
=-100mA,I
B
=-10mA
V
CE
=-5V,I
C
=-20mA,f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
P
82-180
HP
Q
120-270
HQ
R
180-390
HR
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
