2SA1015K
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP
Type
Plastic Encapsulate Transistors
SOT-23
Dim
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
FEATURES
A
B
)
.
Power Dissipation
P
CM
: 0.2 W ( Ta = 25
C
A
L
3
1
3
.
Collector Current
I
CM
:
-0.15
A
D
G
H
B S
2
.
Collector-Base Voltage
V
(BR)CBO
:
-50
V
1
2
Top View
J
K
L
S
V
G
C
D
H
K
J
1.BASE
2.EMITTER
3.COLLECTOR
V
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 )
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Operating and Storage Junction
Temperature Range
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
BE(sat)
f
T
T
J
, T
STG
TEST CONDITIONS
I
C
=
-100
µA, I
E
= 0 A
I
C
=
-0.1
mA, I
B
= 0 A
I
E
=
-10
µA, I
C
= 0 A
V
CB
=
-50
V, I
E
= 0 A
V
CE
=
-50
V, I
B
= 0 A
V
EB
=
-5
V, I
C
= 0 A
V
CE
=
-6
V, I
C
=
-2
mA
I
C
=
-100
mA, I
B
=
-10
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
= 10 V, I
C
= 1 mA,
f = 30 MHz
-
Min.
-50
-50
-5
-
-
-
130
-
-
80
Typ.
-
-
-
-
-
-
-
-
-
-
- 55 ~ +150
Max.
-
-
-
-0.1
-0.1
-0.1
400
-0.3
-1.1
-
UNIT
V
V
V
µA
µA
µA
V
V
MHz
h
FE
VALUES ARE CLASSIFIED AS FOLLOWS:
Rank
h
FE
Marking: BA
L
130
~
200
H
200
~
400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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