2SA1013
Elektronische Bauelemente
-1A, -160V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High Voltage：V
CEO
= -160V
Large Continuous Collector Current Capability
Complementary to 2SC2383
TO-92L
G
H
1
Emitter
2
Collector
3
Base
J
A
D
CLASSIFICATION OF h
FE
Product-Rank
Range
2SA1013-R
60~120
2SA1013-O
100~200
2SA1013-Y
160~320
K
REF.
B
E
C
F
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.70
5.10
7.80
8.20
13.80
14.20
3.70
4.10
0.35
0.55
0.35
0.45
1.27 TYP.
1.28
1.58
2.44
2.64
0.60
0.80
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-160
-160
-6
-1
0.9
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
Ob
Min.
-160
-160
-6
-
-
60
-
-
15
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-1
320
-1.5
-0.75
-
35
Unit
V
V
V
µA
µA
Test Conditions
I
C
= -100µA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -150V, I
E
= 0
V
EB
= -6V, I
C
= 0
V
CE
= -5V, I
C
= -200mA
V
V
MHz
pF
I
C
= -500mA, I
B
= -50mA
V
CE
= -5V, I
C
= -5mA
V
CE
= -5V, I
C
= -200mA
V
CB
= -10V, I
E
= 0, f = 1 MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
